ingaas photodiode sd012 - 121 - 011 www. lunainc .com precision ? control ? results inf ormation in this technical data sheet is believed to be correct and reliable. however, no responsibility is assumed for possible inaccuracies or omissio n. specifications are subject to change without notice. p age 1 / 2 rev 0 2 - 04 - 16 ? 20 16 luna optoelectronics . all rights reserved. luna optoelectronics, 1240 avenida acaso, camarillo ca 93012 ? phone (805) 987 - 0146 ? fax (805) 484 - 9935 description features the sd 01 2 - 121 - 01 1 is a hi gh sensitivity, low capacitance and noise, 0.3mm diameter active area ingaas photodiode , sensitive to wavelengths in visible extended ( 450- 1700nm) spectral range and used for sensing applications. the photodetector is assembled in a to - 46 package. ? low noise ? low dark current and capacitance ? high sensitivity ? light detection (visible, nir, swir) reliability applications this high - reliability device is in principle able to meet military test requireme nts (mil - std - 750, mil - std - 883) after proper screening and group test. contact luna optoelectronics for recommendations on specific test conditions and procedures. ? industrial sensing ? security and defense ? communication absolute maximum ratings symbol min max units reverse voltage 2 0 v t a = 23 c operating temperature 0 to +85 c storage temperature - 25 to +85 c soldering temperature * +2 6 0 c > 2mm from case for < 5 sec wavelength range 400 to 1700 nm package dimensions (inch) (.210) (.144) (.500) (.100) (.184) c l c l anode cathode schematic
ingaas photodiode sd012 - 121 - 011 www. lunainc .com precision ? control ? results inf ormation in this technical data sheet is believed to be correct and reliable. however, no responsibility is assumed for possible inaccuracies or omissio n. specifications are subject to change without notice. p age 2 / 2 rev 0 2 - 04 - 16 ? 20 16 luna optoelectronics . all rights reserved. luna optoelectronics, 1240 avenida acaso, camarillo ca 93012 ? phone (805) 987 - 0146 ? fax (805) 484 - 9935 o pto - electrical parameters t a = 23 c unless noted otherwise parameter test conditions min typ max units breakdown voltage i bias = 1 00 a 10 - - v responsivity = 600 nm 0. 3 0. 35 - a/w responsivity = 1200 nm 0. 7 0. 85 - a/w responsivity = 155 0 nm 0. 9 1.00 - a/w shunt resistance v bias = 10 mv 5 30 - m ? dark current v bias = 1v - 2 20 na capacitance v bias = 1v; f = 1 mhz - 6 20 pf rise time (50 ? load) v bias = 5v; = 826 nm - 5 - ns noise equivalent power = 900nm - 1.0 - 10 - 13 w/hz 0.5 typical performance spectral response 0 0.2 0.4 0.6 0.8 1 1.2 400 600 800 1000 1200 1400 1600 1800 responsivity, a/w wavelenght, nm
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